Product List

The SEMiX604GB176HD is a trench igbt modules. Features of the SEMiX604GB176HD are:(1)homogeneous si; (2)trench=trenchgate technology; (3)Vce(sat) with positive temperature coefficient; (4)high short circuit capability. The absolute ...

The JANTX2N6765 is designed as one kind of power MOSFET transistor. This device features all of the well-establish advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature ...

The LB1393 is designed as one kind of 6-channel driver array with pull-down equivalent resistors, no externally connected resistors are required for ghost prevention. When the input voltage is at a high level, the output gets activated. This ...

The 2SC1946 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio applications. Features of the 2SC1946 are:(1)high power gain:Gpe6.7dB @ VCC=13.5V,Po=28W,f=175MHz;(2)emitter ballasted ...

The 2SC2003 is designed for use in driver stage of high voltage audio equipments. Features of the 2SC2003 are:(1)high total power dissipation,PT:600mW;(2)high hFE and high voltage, hFE(IC=50mA):200 TYP,VCEO:80V. The absolute maximum ...