Street Address: 16 Floor, Building #3, Zhongke Mansion, Gaoxin South 1st Rd, Hi-Tech Park, Nanshan
City: Shenzhen
Province: Guangdong
Country/Region: China
other
1. UV Sensor GUVB-T11GD-L Features
Aluminium Gallium Nitride Based Material Schottky-type Photodiode Photovoltaic Mode Operation Good Visible Blindness High Responsivity & Low Dark Current 2. UV Sensor GUVB-T11GD-L Applications UV-B Lamp Monitoring UV-B LED Monitoring 3. UV Sensor GUVB-T11GD-L Outline Diagrams and Dimensions 4. UV Sensor GUVB-T11GD-L Absolute Maximum Ratings Storage Temperature: -40~90 Operating Temperature: -30~85 Reverse Voltage: 3V Forward Current: 1mA Optical Source Power Range: 0.01µ~100m W/cm2 Soldering Temperature: 260 5. UV Sensor GUVB-T11GD-L Characteristics (at 25) Dark Current(Max.): 20nA Photo Current(Typ.): 1.5µA Temperature Coefficient: 0.1%/ Responsivity: 0.13A/W Spectral Detection Range: 220~320nm Active area: 1.536mm2