The 2SC3670 is a transistor,silicon npn epitaxial type(pct process).
Features of the 2SC3670 are:(1)high dc current gain and excellent hFE linearity,hFE(1)=140~600,hFE(2)=70(Min.),200(Typ.); (2)low saturation viltage:Vce(sat)=0.5(Max.).
The absolute maximum ratings of the 2SC3670 can be summarized as:(1)collector-base voltage:30V; (2)collector-emitter voltage:30V(Vces),10V(Vceo); (3)emitter-base voltage:6V; (4)collector current:2A(DC),5A(Pulsed); (5)base current:0.5A; (6)collector power dissipation:1000mW; (7)junction temperature:150; (8)storage temperature range:-55~150.
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