Applicationt:
universal
Production Description:
3.0mm Round Type Phototransistor
Features:
1. Chip material: Si
2. Lens Appearance: Black
3. Low power consumption.
4. High efficiency.
5. Versatile mounting on P.C. Board or panel.
6. Low current requirement.
7. This product don’t contained restriction
substance, compliance RoHS standard.
Applications:
1. Optical coupler
2. Game machine
3. Sensor
Absolute maximum ratings(Ta=25°C) Parameter Symbol RatingUnit Total Power Dissipation Pd 150 mW Reverse Voltage VR 32 V Operating Temperature Topr -40~+85 °C Storage Temperature Tstg -40~+85 °C Soldering Temperature*1 Tsol 260±5 °C
Notes: *1. Soldering time≤5 seconds.
Electrical and optical characteristics(Ta=25°C)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
Wavelength of max. sensitivity
λMAX
-
-
850
-
nm
Spectral range of sensitivity
l
S = 10 % of Smax
700
-
1200
nm
Short-Circuit Current
ISC
Ee=5mW/cm2
λP=850nm
-
45
-
mA
Reverse Light Current
IL
Ee=5mW/cm2
λP=850nm VR=10V
-
45
-
mA
Rise time of the photocurrent
TR
RL=1KΩ VR=10V
-
6
-
uS
Fall time of the photocurrent
TF
-
6
-
Dark current VR=10V
ID
E=0mW/cm2
-
-
10
nA
Open-circuit voltage
VO
E=5mW/cm2
λ=850nm
-
0.42
-
V
Capacitance VR = 0 V
C0
f = 1 MHz, E = 0
-
5
-
pF
Reverse Breakdown Voltage
BVR
E=0mW/cm2
IR=100mA
32
_
_
V
Receive angle
2θ1/2
-
-
70
-
deg
Package Dimension:
3.0mm Round Type Phototransistor
1) Material: silicone
2) Spectral range of sensitivity:700-1200nm
3) Rohs compliant